IMS- Micro/Nano Fabrication Facility
Processing (Older)
High Temperature Process

Polymer Curing/Sintering

Thermo Oxidation

Lindberg Furnace 3

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Polymer curing and sintering;

Wet/Dry oxidation;

Nitride growth;

 


Mini Tystar Tube 1

Location: Marcus Inorganic Cleanroom

Substrate Size: < 4 in

Number of Substrates Allowed: 1 - 25

Depositions Available: SiO2

Special Features:

Flash Vaporizer: 700-1100°C;

Uniformity is usually less than 1%

            

  

 


Mini Tystar Tube 2

Location: Marcus Inorganic Cleanroom

Substrate Size: < 4 in

Number of Substrates Allowed: 1 - 25

Depositions available: SiO2

Special Features:

Flash Vaporizer: 700-1100°C;

            

  

 

 


MRL Furnace - Tube 3

Location: Marcus Inorganic Cleanroom

Substrate Size: 4"-8"

Number of Substrates Allowed: 1 - 50

Special Features:

Excellent Uniformity (< 1%);

 

            

  

 


Tystar Nitride Furnace 3

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Solid-source N-type doping;

            

  

 

 


Tystar Poly Furnace 2

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Wet/Dry Oxidation;

Kooi and P-well drive-in;

            

  

 

 


LPCVD

Tystar Nitride Furnace 4 - Nitride

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

LPCVD silicon nitride;

            

  

 

 


Mini Tystar Tube 3 - TEOS Oxide

Location: Marcus Inorganic Cleanroom

Substrate Size: < 4 in

Number of Substrates Allowed: 1 - 25

Special Features:

Oxide uniformity less than 3%;

            

  

 

 

 


Annealing

AET RTP

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Sample can reach 1100C in 20 seconds;

 

            

  

 

 


MRL Furnace - Tube 4

Location: Marcus Inorganic Cleanroom

Substrate Size: 4"-8"

Number of Substrates Allowed: 1 - 50

Special Features:

700-1150C;

 

            

  

 

 

 


Tystar Poly Furnace 1

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

LTO/Implantation anneal;

            

  

 

 

 


Doping

Tystar Nitride Furnace 2 - P doping

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Solid-source P-type doping;

            

  

 

 


Tystar Nitride Furnace 1 - N doping

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Solid-source N-type doping;


PolySilicon

Tystar Poly Furnace 3

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Polysilicon deposition (N-doped);

Silane and Phosphine gas;


Tystar Poly Furnace 4

Location: Pettit Cleanroom

Substrate Size: ?

Number of Substrates Allowed: ?

Special Features:

Polysilicon deposition (P-doped);

Silane and Boron Tricholoride gas;