IMS- Micro/Nano Fabrication Facility
Processing (Older)
Plasma Therm PECVD - Standard Oxide Recipe
Equipment

EquipmentPlasma Therm PECVD

ManufacturePlasma-Therm, Inc

ModelWafer/Batch 790 Series

Platen size8 in
        

Recipe

Recipe NameSTDOX

Gas 2% SiH4/N2    400 sccm


N2        900 sccm

Platen Power25 W

RF Frequency13.56 Mhz

Chamber Pressure900 mTorr

Platen Temperature250 ºC



Results a


Deposition Rate480.15 A/min b

Uniformity7.19 % c

Refractive Index1.468 d

Stress Level-145.71 MPascal e

Etch Rate (100:1 BOE)307.1 A/min f

a: All data is updated as the date indicated above

b: An average value from 15 min deposition

c: Film thickness variation across a 4” wafer, defined as (max-min)/average

d: An average value across a 4” wafer

e: Measured with optical stress measurement tool

fAn average value from 20 min etch