IMS- Micro/Nano Fabrication Facility
Processing (Older)
Oxford PECVD Left - Carbide
 Equipment
          EquipmentOxford PECVD Left

Manufacturer:Oxford Instruments

ModelPlasmalab 80 Plus

Platen Size8 in



 Recipe

Recipe Name:Standard SiC

Gas  Silane: 13 sccm

Methane: 100 sccm

Nitrogen: 185 sccm

Pressure1000 mtorr

Temperature250°C

Platen Power50 W



 Resultsa

Deposition Rate:362.46 Å/minb

Uniformity:81.55%c

Refractive Index at 633nm:1.85d

Stress Level:-308.67 MPascale




a: All data is updated as the date indicated above

b: An average value from 20 min deposition

c: Film thickness variation across a 4” wafer, defined as (max-min)/average

d: An average value across a 4” wafer

e: Measured with optical stress measurement tool