IMS- Micro/Nano Fabrication Facility
Processing (Older)
Oxford PECVD Right - Oxide
 Equipment
          EquipmentOxford PECVD Right

Manufacturer:Oxford Instruments

ModelPlasmalab 80 Plus

Platen Size6 in



 Recipe

Recipe Name:Standard SiO2

Gas  Silane: 8.5 sccm

Nitrous Oxide: 710 sccm

Nitrogen: 162 sccm

Pressure1000 mtorr

Temperature300°C

Power20 W



 Resultsa

Deposition Rate:598.97 Å/minb

Uniformity:1.23%c

Refractive Index at 633nm:1.4761d

Stress Level:-98.83 MPascale

 Etch Rate (100:1 BOE)159.7  Å/minf




a: All data is updated as the date indicated above

b: An average value from 20 min deposition

c: Film thickness variation across a 4” wafer, defined as (max-min)/average

d: An average value across a 4” wafer

e: Measured with optical stress measurement tool

f: An average value from 20 min etch