IMS- Micro/Nano Fabrication Facility
Processing (Older)
STS PECVD 2 - Oxide
 Equipment
          EquipmentSTS PECVD 2

Manufacturer:STS

ModelMultiplex CVD

Platen Size10 in



 Recipe

Recipe Name:hfstdox

Gas  2% Silane in Nitrogen: 400 sccm

Nitrous Oxide: 1420 sccm

Pressure650 mtorr

Temperature300°C

Power25 W



 Resultsa

Deposition Rate:402.18 Å/minb

Uniformity:3.62%c

Refractive Index at 633nm:1.476d

Stress Level:-360.71 MPascale

Etch Rate (100:1 BOE)108.9 Å/minf




a: All data is updated as the date indicated above

b: An average value from 20 min deposition

c: Film thickness variation across a 4” wafer, defined as (max-min)/average

d: An average value across a 4” wafer

e: Measured with optical stress measurement tool

f: An average value from 20 min etch