IMS- Micro/Nano Fabrication Facility
Processing (Older)
Wet Etching

Metal

Cu Etching

Etch Rates of Copper (nm/min)

Copper Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Al Etching

Etch Rates of Aluminum (nm/min)

Aluminum Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Cr Etching

Etch Rates of Chromium (nm/min)

Chromium Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Au Etching

Etch Rates of Gold (nm/min)

Gold Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Titanium Etching

Etch Rates of Titanium (nm/min)

Titanium Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Dielectric

Silicon Dioxide Etching

Etch Rates of Silicon Dioxide (nm/min)

SiO2 Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003


Silicon Nitride Etching

Etch Rates of Silicon Nitride (nm/min)

Silicon Nitride Etch Rates 




*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Polymer

General Polymer Etching Reference

Etch Rate for Resists, Parylene, Polyimdes (nm/min)

 

  S1800 Positive Reist Furrex Negative Reist Parylene CPolyimde
 Piranha >92,000>59,000 2.6 >17,000
 MicroStripper >94,000 >60,000 N/A 520
 Acetone >176,000 >87,000 0.77 0



*Cited from JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 12, NO. 6, DECEMBER 2003

Semiconductor

Silicon KOH Etching

50% KOH Etching of Silicon 100a


50% KOH Etching of Silicon 110a


a: Cited from www.cheanroom.byu.edu

Silicon HNA Etching

HNA Solution (suggested ratio):

Acetic Acid: 160 ml

Nitric Acid: 60 ml

Hydrofluoric Acid: 20 ml

Temperature:

Room Temperature

Etch Rate:

1 - 3 um/minute