IMS- Micro/Nano Fabrication Facility
Processing (Older)
Metal Deposition

Sputtering

PVD RF Sputterer - Al

Recipea

Recipe NameAl

Pressure5.0 mTorr

Argon  30 sccm 

Step 1  

Ramp to  150 W 

Ramp Rate 120 W/min 

Hold for 5 min

Step 2 

Ramp to 0 watts60 W/min

Hold for5 min

a: The parameters were tested by IEN cleanroom staff

Unifilm Sputterer - Cu

Equipment
          EquipmentUnifilm Sputterer

Manufacturer:Unifilm Inc

Substrate Sizeup to 4 in



 Recipe

Recipe Name:Cu-DC1-4-A

ModeS4-3-A

Gas  Ar: 90 sccm

Pressure5 x 10-3 mtorr

Deposition Rate79 - 3200 A/min



 Resultsa

Uniformity:2%b




a: All data is measured by IEN cleanroom staff

b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Au

Equipment
          EquipmentUnifilm Sputterer

Manufacturer:Unifilm Inc

Substrate Sizeup to 4 in



 Recipe

Recipe Name:Au-DC1-3-A

ModeS4-3-A

Gas  Ar: 90 sccm

Pressure5 x 10-3 mtorr

Deposition Rateup to 248 A/min



 Resultsa

Uniformity:2%b




a: All data is measured by IEN cleanroom staff

b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Ti

Equipment
          EquipmentUnifilm Sputterer

Manufacturer:Unifilm Inc

Substrate Sizeup to 4 in



 Recipe

Recipe Name:Ti-DC1-5-A

ModeS4-3-A

Gas  Ar: 90 sccm

Pressure5 x 10-3 mtorr

Deposition Rate129 - 1292 A/min



 Resultsa

Uniformity:2%b




a: All data is measured by IEN cleanroom staff

b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Cr

Equipment
          EquipmentUnifilm Sputterer

Manufacturer:Unifilm Inc

Substrate Sizeup to 4 in



 Recipe

Recipe Name:Cr-DC1-4-A

ModeS4-3-A

Gas  Ar: 90 sccm

Pressure5 x 10-3 mtorr

Deposition Rate100 - 1500 A/min



 Resultsa

Uniformity:2%b




a: All data is measured by IEN cleanroom staff

b: Film thickness variation across a 4” wafer, defined as (max-min)/average

Unifilm Sputterer - Al

Equipment
          EquipmentUnifilm Sputterer

Manufacturer:Unifilm Inc

Substrate Sizeup to 4 in



 Recipe

Recipe Name:Al-DC1-4-B

ModeS4-3-A

Gas  Ar: 90 sccm

Pressure5 x 10-3 mtorr

Deposition Rate60 - 1000 A/min



 Resultsa

Uniformity:2%b




a: All data is measured by IEN cleanroom staff

b: Film thickness variation across a 4” wafer, defined as (max-min)/average

ALD

Cambridge NanoTech Plasma ALD - Pt

 Equipment
          EquipmentCambridge NanoTech Plasma ALD - Metal

Substrate Sizeup to 6" wafer



 Recipea

Recipe NamePlasma_Pt_95C_or_Higher

 Wait 600 sec


Argon Carrier: 60 sccm

 Argon Plasma: 200 sccm


Wait 1 sec

 Pulse (): 1 sec


O2 Plasma: 20 sccm

 Wait 10 sec


RF Power: 300 W


Wait 5 sec


H2 Plasma: 20 sccm


Wait 10 sec


H2 Plasma: 0  sccm


Wait 10 sec


Argon Carrier: 20 sccm


Argon Plasma: 40 sccm


Platen Temp: 95 C or higher

a: The parameters were tested by IEN cleanroom staff


Cambridge NanoTech Plasma ALD - ZnO

 Equipment
          EquipmentCambridge NanoTech Plasma ALD - Metal

Substrate Sizeup to 6" wafer



 Recipea

Recipe NamePlasma_Pt_95C_or_Higher

Wait Time600 sec

Ar Carrier60 sccm

Ar Plasma200 sccm

Wait Time1 sec

Pulse1 sec

O2 Plasma20 sccm

Wait Time10 sec

RF Power300 W

Wait Time5 sec

H2 Plasma20 sccm

Wait Time10 sec

H2 Plasma0  sccm

Wait Time10 sec

Ar Carrier20 sccm

Ar Plasma40 sccm

Platen Temp95 C or higher

a: The parameters were tested by IEN cleanroom staff


Evaporation

Denton Explorer - Fe

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameFe

Crucible4

Scan Pattern2

XTC File003




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Pt

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NamePt

Crucible6

Scan Pattern5

XTC File011




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Au

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameAu

Crucible6

Scan Pattern1

XTC File001




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Ti

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameTi

Crucible1

Scan Pattern1

XTC File001




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Cu

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameCu

Crucible6

Scan Pattern5

XTC File006




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Cr


 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameCr

Crucible2

Scan Pattern1

XTC File004




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Al

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameAl

Crucible5

Scan Pattern5

XTC File002




a: The parameters were tested by IEN cleanroom staff


Denton Explorer - Ni

 Equipment
          EquipmentDenton Explorer

Substrate Sizeup to 4" wafer



 Recipea

Recipe NameNi

Crucible3

Scan Pattern2

XTC File005




a: The parameters were tested by IEN cleanroom staff


Electroplating

Copper Plating

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Transene Copper  Plating Acid Type

Anode Copper Board

Anode to Cathode Ratio 1:1

Temperature 21 - 49 oC

pH 2.5 - 3.5

Stirring Rate 500 rpm

Current Density 0.21 - 0.54 mA/cm2

Pulse Optional

a: The parameters are provide by Transene


Nickel Plating

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Sulfamate Nickel Plating SN-10

Anode Sulfur Depolarized Nickel

Anode to Cathode Ratio 1:1

Temperature 32 - 60 oC

pH 4.2 - 4.8

Stirring Rate 500 rpm

Current Density 0.05 - 2.1 mA/cm2

Pulse Optional

a: The parameters are provide by Transene


Gold Plating

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Transene Sulfite Gold TSG-250

Anode Platinized

Anode to Cathode Ratio 1:1

Temperature 43 - 71 oC

pH 6.0 - 7.0

Stirring Rate 500 rpm

Current Density 0.01 - 0.08 mA/cm2

Pulse Optional

a: The parameters are provide by Transene


Solder Plating

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Techni Solder Matte NF820 60/40

Anode Sn/Pb Anode

Anode to Cathode Ratio 1:1

Temperature 20 oC

Stirring Rate 500 rpm

Current Density  30 mA/cm2

Pulse Optional

a: The parameters are provide by Transene


Electroless Plating

Electroless Nickel

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Transene Nickelex

pH 5

Temperature 90 - 98 oC

Substrate Si, Ge, GaAs, Ni, CdS, Kovar

Deposition Rate 200 nm/min at 95 oC on silicon







a: The parameters are provide by Transene


Electroless Gold

 Equipment
          EquipmentPlating Station

Substrate Sizeup to 6" wafer



 Plating Parametersa

Plating Solution Immersion Gold CF

Mix Ratio3535 ml Part A, 250 ml Part B

pH 8.6 - 9.0

Temperature 70 - 75 oC

Substrate Si, Ge, GaAs, Ni, CdS, Kovar

Deposition Rate

 25 nm/min on Ni

 40 nm/min on Cu


Plating Thickness

 0.5 um Maximum


Agitation

 Continuous Required


a: The parameters are provide by Transene