IMS- Micro/Nano Fabrication Facility
Processing
Silicon HNA Etching

HNA Solution (suggested ratio):

Acetic Acid: 160 ml

Nitric Acid: 60 ml

Hydrofluoric Acid: 20 ml

Temperature:

Room Temperature

Etch Rate:

1 - 3 um/minute

Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu