The Georgia Tech Mini Tystar 3 is used for low temperature oxidation (LTO) at 725°C and pressure of 300mT. Batches of 4” silicon wafers (up to 25 wafers) can be processed at the same time, and the oxide uniformity is usually less than 3%.

Common recipes:
TEOS.003
STBY.003

LTO deposition rate at 12nm/min. Max process temperature is 850C.