IEN - Micro/Nano Fabrication Facility
Tystar Poly Furnace 3

  ↵

 

Information
Schedule
Training
Equipment Description

The Georgia Tech Tystar Poly Furnace 3 is used for polysilicon (undoped and N-doped) deposition at a low pressure (250 mT) and low temperature (588C) with silane (SiH4) and phosphine (PH3). Common process recipes: POLYCOM.007 DPOLY.007 STBY.007 Max process temperature is 750C.

Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
 Pettit Cleanroom
Related Links
Contact Information
Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
© Georgia Institute of Technology