The Georgia Tech Tystar Nitride Furnace 4 is used for LPCVD silicon nitride, including stoichiometric silicon nitride and low stress silicon nitride. Common recipes: NITRCOMM.004 LSNITRID.004 (Deposition rate: 3.46 nm/min, n=2.28 (Nov 3,2014)) Max process temperature: 850C.

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