IEN - Micro/Nano Fabrication Facility
E-beam Lithography


G Series

The Georgia Tech Elionix ELS-G100 is a high speed, ultra high precision thermal field emission (TFE) electron beam lithography system developed to meet the market needs for next-generation nanometric applicatioread more

Nano Specs:
  • Generates patterns with a line width of 7nm
  • Stable 1.8nm electron beam using high beam current at 100kV
  • A 20bit DAC provides high beam positioning resolution
  • At a beam current of 1nA, 20nm lines can be written over an entire 500μm field without stitching
  • 8 inch stage
Contact Information
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