IEN - Micro/Nano Fabrication Facility
Tystar Poly Furnace 4

 

 

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Equipment Description

The Georgia Tech Tystar Poly Furnace 4 is used for polysilicon (undoped and P-doped) deposition at a low pressure (250 mT) and low temperature (588C) with silane (SiH4) and diborane (B2H6). Common process recipes: POLYCOM.008 BDPOLY.008 STBY.008 Max process temperature is 750C.

Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
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Pettit Cleanroom
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