The Georgia Tech Unaxis RIE 790-10-RIE system operates at 13.56 MHz and etches SiO2, SiNx etc. Small pieces up to 8" wafers are allowed in this system. RIEs (Reactive Ion Etcher) are used to etch various materials, using reactive gases in a RF (radio frequency) reactive ion plasma. 

Functions

• Shallow silicon etching

Materials Etched

• Si

Masks

• Si3N4 , SiO2 , photoresist

Component specifications

• 500W 13.56MHz AE RF5S– Platen

Gases

• CF4, CHF3, Ar, O2

Process Pressure

• 10-800mTorr

Substrate

• small pieces-8” wafer