The Georgia Tech Unaxis RIE system operates at 13.56 MHz and etches metals such as Al, Cr, and Ti. Small pieces up to 10" wafers are allowed in this system. RIEs (Reactive Ion Etcher) are used to etch various materials, such as semiconductors, polymers, and various metals using reactive gases in a RF (radio frequency) reactive ion plasma. 

Functions

• Shallow silicon etching

Materials Etched

• Si

Masks

• Si3N4 , SiO2 , photoresist

Component specifications

• 500W 13.56MHz AE RF5S– Platen

Gases

• Cl2 , BCl3 , O2 , Ar

Process Pressure

• 10-800mTorr

Substrate

• small pieces-4” wafer (up to 3)

Temperatures

• 5-40°C

Issues

• GFI fails, had to bring in external 120vac