The Georgia Tech Oxford Endpoint RIE (Reactive Ion Etcher) system is designed to etch materials such as SiO2 and SiXNY. This RIE system operates at 13.56MHz and has one chamber that is used for etching of dielectric materials. This machine is not available for metal etching. A graphite plate is available to reduce temperature build up during a long process run. Small pieces up to 10" wafers are allowed in this system.

Functions

• General plasma etching
• EPD not currently installed

Materials etched and acceptable masks

• Etched: SiO2 , SiyNx
• Masks: photoresist, metal

Component specifications

• 500W 13.56MHz AE – Platen
• Power: 300W

Gases

• Ar, O2 , CHF3 , CF4

Process Pressure

• 5-500 mTorr

Substrate

• small pieces – one 4” wafer

Temperatures

• 5-45˚C

Issues

• Intermittent I/O failures. Possible candidate for PLC/CtrLayer Upgrade