IEN - Micro/Nano Fabrication Facility
Plasma Therm ICP
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Equipment Description

The Georgia Tech Plasma Therm ICP is equipped with two chambers -- one is dedicated to deep anisotropic. The Plasma Therm ICP (inductively coupled plasma) etcher (DRIE) can be used to etch a variety of materials.

  • SILICON (BOSCH process)
  • SILICON DIOXIDE
  • POLYMER 
  • III/V Etching
  • Metal Mask Allowed (Dielectric and III/V Chamber)

Photo Resist Mask Only

Dual Chamber Etching System Featuring

  • Right: Si trench etch / poly-Si / through-wafer
  • Left: III-V etching; SiO2 Si3N4 & Al / metal etching

Materials etched and acceptable masks

  • Etched/Left: SiO2 , Si3N4 , Al, III-V -> InP, InGaAs
  • Mask/Left: Metal, Photoresist
  • Etched/Right: Silicon, poly-Si
  • Mask/Right: no metal masks (only PR, Si3N4 , SiO2 )

Component Specifications (both)

  • Coil: 2000W 2.8MHz RFPP RF-20M
  • Platen: 500W 13.56MHz RFPP RF-5S
  • HBC
  • Left: Ceramic Clamp
  • Right: ESC

Gases

  • Left: Cl2 , BCl3 , C4F8 , CF4 , H2 , Ar, O2
  • Right: SF6, O2, C4F8, Ar

Process Pressure (both)

  • 5-80mTorr

Substrate

  • Small pieces - one 100mm wafer, up to 150mm in right chamber

Temperatures

  • Platen:
  • Left 20°C
  • Right 20°C
  • Chamber
  • 40°C

Recent Service/Modification

  • Right chamber HBC leak repaired
  • Full platen PM for both chambers (seals, lift, cleaning)
Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
Pettit Cleanroom