The Georiga Tech Oxford ICP-PECVD is an Inductively Coupled Plasma (ICP) assisted Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films. The ICP capability enables the high-density (HD) and low temperature dielectric thin film deposition.
Specification:
- SiO2, Si3N4 only
- Loadlock with 1 wafer carousal for small piece and up to 4" wafer
- Room temperature to 400C dielectric deposition