IEN - Micro/Nano Fabrication Facility
Oxford ICP-PECVD
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Equipment Description

The Georiga Tech Oxford ICP-PECVD is an Inductively Coupled Plasma (ICP) assisted Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films. The ICP capability enables the high-density (HD) and low temperature dielectric thin film deposition.

Specification:

  1. SiO2, Si3N4 only
  2. Loadlock with 1 wafer carousal for small piece and up to 4" wafer
  3. Room temperature to 400C dielectric deposition
Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
Marcus Inorganic Cleanroom
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