IEN - Micro/Nano Fabrication Facility
STS SOE ICP 
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Equipment Description

The Georgia Tech STS SOE system combines a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures. With this technology, STS ICP Standard Oxide Etcher is suitable for shallow etching (less than 15 micron trenches) of SiO2 and III-V materials that require higher etch rates, higher aspect ratios, and better selectivity compared to using conventional RIE technology on 4" wafers.

  • Shallow Silocon trench etching
  • III-V etching Substrates and Masks
  • Substrates: SiO2, Si (<10um)
  • Mask: Resist, SiO2, Si3N4, III-V

Specifications

  • Coil: 1000W 13.56 MHz ENI
  • Platen: 300W 13.56 MHz ENI
  • 8-pin ceramic clamp for 100mm w/ HBC Lip Seal

Gases:

  • CH4, H2, Cl2 BCl3, HBr,
  • CHF3, CF4, Ar, O2, N2 

Process Pressure:

  • 2 – 80 mTorr

Process Temperature:

  • -20 - 180 C (platen), 40 C (walls), 45 C (lid)
Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
Marcus Inorganic Cleanroom
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