The Georgia Tech STS SOE system combines a high conductance, high vacuum compatible process chamber with a patented ICP source to produce a very high ion density at low pressures. With this technology, STS ICP Standard Oxide Etcher is suitable for shallow etching (less than 15 micron trenches) of SiO2 and III-V materials that require higher etch rates, higher aspect ratios, and better selectivity compared to using conventional RIE technology on 4" wafers.
- Shallow Silocon trench etching
- III-V etching Substrates and Masks
- Substrates: SiO2, Si (<10um)
- Mask: Resist, SiO2, Si3N4, III-V
Specifications
- Coil: 1000W 13.56 MHz ENI
- Platen: 300W 13.56 MHz ENI
- 8-pin ceramic clamp for 100mm w/ HBC Lip Seal
Gases:
- CH4, H2, Cl2 BCl3, HBr,
- CHF3, CF4, Ar, O2, N2
Process Pressure:
Process Temperature:
- -20 - 180 C (platen), 40 C (walls), 45 C (lid)