IEN - Micro/Nano Fabrication Facility
STS Pegasus ICP
Equipment Description

The Georgia Tech STS Pegasus ICP is a deep reactive ion etcher (DRIE) with a dual plasma source design. It is designed to etch silicon through a Bosch Process. The process allows the sample to have a more uniform, anisotropic etch on 4" wafers. The STS Pegasus ICP is unique and provides users with high etch rates, excellent uniformity, and results in a highly concentrated and uniformed distribution of radicals.


  • Silicon Trench Etching (Bosch process)
  • First Pegasus installed in US university

Materials etched and acceptable masks

  • Etched: Si, poly-Si, α-Si
  • Masks: Photoresist, Si3N4 , SiO2

Component Specifications

  • 5000W 13.56MHz MKS – Coil
  • 500W 13.56MHz ENI -- Platen
  • 300W 380kHz AE LF-5
  • Backside helium cooling with electrostatic chuck


  • C4F8 , SF6 , O2 , Ar

Substrate size

  • small pieces – one 100mm wafer or 150mm capability

Process Pressure 

  • 2-80mT


  • Platen -20°C to 40°C, Walls 120°C, Lid 120°C

Vendor Specified Capabilities with 10% exposed Si (Width : Trench Depth)

  • 0.5µm : 30µm SOI (LF platen)
  • 0.2µm : 10µm SOI (LF platen)
  • 3µm : 100µm (HF platen)
  • 2µm : 60µm (HF platen)
Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
Marcus Inorganic Cleanroom
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