The Georgia Tech CHA 1 E-beam evaporator will provide very little coating to the sides of any features that are perpendicular to the surface of the substrate (anisotropic). -Used to deposit dielectrics -Low Process Pressure

Function

• E-beam Evaporation System for Dielectric Materials

Materials Deposited

• SiO2, Si, TiO2, Al203, Ge, HfO2, ITO

Component Specifications

• 20cc 4 pocket crucibles.
• Direct to Pocket O2 delivery system.
• Sample holder holds up to three 4” wafers.

Gases

• O2

Substrate Size

• Up to 4” wafer

Process Pressure

• 5x10-6Torr – 5x10-7Torr

Temperature

• No heater available.

Vendor Specified Capabilities

• 4 Pocket E-beam Evaporation system.
• Sample rotation.
• Cyrstal sensor deposition monitoring system.
• Cryopump vacuum system.