The Georgia Tech RF sputterer can be used to deposit many dielectrics. Coatings are performed by accelerating ions or an argon oxygen mixture into the surface of a sputter target, which is made of the material to be applied to the sample. -Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition) -Max RF power 325W -Integrated touch screen control -Single substrate up to 12" diameter -Multiple substrate up to 4" diameter -Substrate fixture rotation up to 20rpm

Function

• RF Sputterer System

Materials Deposited

• Ti, Cu, ITO, ZnO, SiO2, Al203, Si

Component Specifications

• Two 3” Sputtering Guns
• One 12” Diameter Sample holder.

Gases

• Ar, O2, N2

Substrate Size

• Up to one 12” diamter wafer.

Process Pressure

• 5mTorr

Vendor Specified Capabilities

• Two RF Power supplies and tuning networks allowing for Co-deposition.