The Georgia Tech Cambridge Fiji Plasma ALD system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm. Specifications: -Dual chamber w/ load-locks -Chuck temperature from RT to 500C -RF Plasma (up to 300W) -Up to 8" (200mm) wafer -Auto-logs run data (pressure, temp, etc) Materials available (as of 10/10/14): Al2O3, HfO2, ZnO2, ZrO2, AlN, HfN, ZrN