The Georgia Tech Atomic Layer Deposition (ALD) tool is used to deposit atomic layers of material. The ALD2 uses 4 precursor gases and pulses each with a N2 purge following each pulse. Each cycle of gases deposits an atomic layer of material via typically two half-reactions. The tool is currently set up to deposit Al2O3 (1.0-1.1 angstrom/cycle) , HfO2, and Er2O3.
Specifications:
Sample sizes: wafer pieces up to 6" wafer
Temperature range: 25C-250C
Base pressure: 5mT