Cambridge NanoTech Plasma ALD - Metal (left)
Information
Schedule
Training
The Georgia Tech Cambridge Fiji Plasma Atomic Layer Deposition (ALD) system uses ALD precursors to deposit pin-hole free films in ultra-high aspect ratio features. Film thickness can be controlled to within 1nm.
Specifications:
Dual chamber w/ load-locks
Chuck temperature from Room temperature to 500C
RF Plasma (up to 300W)
Sample size: Pieces Up to 8" (200mm) wafer
Auto-logs run data: pressure, temp, etc
Materials available (as of 10/10/14): Al2O3, AlN , HfO2, SiO2, TiO2
| Institute |
Georgia Tech |
| Department |
IEN - Micro/Nano Fabrication Facility |
Sub Tool Of  |
Marcus Inorganic Cleanroom |
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