IEN- Micro/Nano Fabrication Facility
3.5.4 III-V Etch

This section contains the standard III-V etch recipes for all GT ICP equipment: Plasma Therm ICP (Left Chamber)

Plasma Therm ICP (Left Chamber)

  • Location: Pettit Cleanroom
  • Etching Capabilities:
    • GaN Etch
  • Sample size:
    • Pieces to 4” wafer. Pieces have to be placed on a four inch Si wafer with cool grease, or with a kapton tape.
  • Standard Recipes:

Plasma Therm ICP GaN etch

Contact Information
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332

For process support please click below