IMS- Micro/Nano Fabrication Facility
3.5.4 III-V Etch

This section contains the standard III-V etch recipes for all GT ICP equipment: Plasma Therm ICP (Left Chamber)

Plasma Therm ICP (Left Chamber)

  • Location: Pettit Cleanroom
  • Etching Capabilities:
    • GaN Etch
  • Sample size:
    • Pieces to 4” wafer. Pieces have to be placed on a four inch Si wafer with cool grease, or with a kapton tape.
  • Standard Recipes:

Plasma Therm ICP GaN etch

Contact Information
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332

For process support please click below
Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
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