This section contains the standard dielectric etch recipes for all GT RIE and ICP equipment:  Vision RIE 2, Vision RIE 1, Oxford End-Point RIE, Unaxis 790 RIE, Plasma Therm RIE (Right Chamber), and  Plasma Therm ICP (Left Chamber).

Comparison of Oxide Etch Details for GT RIE and ICP Equipment

Vision RIE 2

• Location: Marcus Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 8” wafer
  • Up to four, 4” wafers or a single 6” wafer at one time
• Standard Recipes:

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Vision RIE 1

• Location: Marcus Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 8” wafer
  • Up to four, 4” wafers or a single 6” wafer at one time
• Standard Recipes:

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Oxford End-Point RIE

• Location: Marcus Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 8” wafer
• Standard Recipes:

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Unaxis 790 RIE

• Location: Marcus Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 8” wafer
• Standard Recipes:

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Plasma Therm RIE (Right Chamber)

• Location: Petitt  Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 4” wafer
  • Up to four, 4” wafers at a time
• Standard Recipes:

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Plasma Therm ICP (Left Chamber)

• Location: Petitt  Cleanroom
• Etching Capabilities:
  • Silicon Dioxide
  • Descum
• Sample size:
  • Pieces to 4” wafer. Pieces has to be placed on a four inch Si wafer with cool grease, or with a kapton tape
• Standard Recipes:

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