IEN - Micro/Nano Fabrication Facility
3.2 CVD Recipes

This section contains the standard recipes for all GT PECVD equipment: Unaxis PECVD; STS PECVD 3; Oxford ICP-PECVD

Unaxis PECVD

  • Location: Pettit Cleanroom
  • Materials available:
    • Silicon Dioxide
    • Silicon Nitride
    • Silicon Oxynitride
    • Amophorous Silicon
  • Platen size:
    • 11" platen
    • Up to four 4” wafers at one time

Standard Recipes

GT Unaxis Recipe

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STS PECVD 3

  • Location: Marcus Inorganic Cleanroom
  • Materials available:
    • Silicon Dioxide
    • Silicon Nitride
  • Sample size:
    • pieces to 4” wafer
    • Up to one 4” wafer

Standard Recipes

GT STS PECVD Recipe

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Oxford ICP-PECVD

  • Location: Marcus Inorganic Cleanroom
  • Materials available:
    • Silicon Dioxide
    • Silicon Nitride
  • Sample size:
    • pieces to 4” wafer
    • Up to one 4” wafer

Standard Recipes

GT Oxford ICP-PECVD Recipe

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Contact Information
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332

For process support please click below