IEN - Micro/Nano Fabrication Facility
STS PECVD 3
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Equipment Description

The Georgia Tech STS PECVD 3 is a Plasma-Enhanced Chemical Vapor Deposition (PECVD) equipment for deposition of high quality semiconductor and dielectric thin films.

Specification:

  1. SiO2, Si3N4, a-Si
  2. 4", 6" wafer only
  3. Loadlock with 2 wafer carousal
  4. P+/N- doping gases available
  5. Both low/high frequency RF power available
Institute Georgia Tech
Department IEN - Micro/Nano Fabrication Facility
Sub Tool Of
Marcus Inorganic Cleanroom
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