Thermal Film Growth -

Thermal Film Growth

Semi Insulating Polycrystalline Silicon

Thermal Oxide Low Temp

Thermal Oxide High Temp

Standard Thermal Nitride

Low Stress Thermal Nitride

Poly-Silicon

Temp (°C)	580 - 650 (Lower T, Lower Stress)
Pressure (mT)	200 - 400
Gas (sccm)	Sih2: 50 - 100
Refractive Index	4.0
Rate (Å/min)	50 - 100 (Lower T/P, Lower Dep. Rate)

Semi Insulating Polycrystalline Silicon

Temp (°C)	700-850
Pressure (mT)	200 - 400
Gas1 (sccm)	N2O - 100
Gas2 (sccm)	SiH4: 10-25
Refractive Index	1.45
Rate (Å/min)	50 - 100

Thermal Oxide Low Temp

Temp (°C)	400-450
Pressure (mT)	200 - 400
Gas1 (sccm)	SiH4 - 85
Gas2 (sccm)	O2: 120
Refractive Index	1.45
Rate (Å/min)	100-120

Thermal Oxide High Temp

Temp (°C)	700-850
Pressure (mT)	200 - 400
Gas1 (sccm)	N2O - 100
Gas2 (sccm)	SiH4: 10-25
Refractive Index	1.45
Rate (Å/min)	50 - 100

Wet Oxidations

Equipment	Tystar Furnace
Temp (°C)	800-1150
Pressure (mT)	atm
Gas1 (sccm)	O2 - 3000
Rate (Å/min)	--

Standard Thermal Nitride

Equipment	Tystar Furnace
Temp (°C)	780-800 (Higher T, Lower Stress)
Pressure (mT)	200-400
Gas1 (sccm)	SiH2Cl2 - 33
Gas2 (sccm)	NH3 - 100
Refractive Index	2.0
Deposition Rate (Å/min)	--

Low Stress Thermal Nitride

Recipe	Low Stress Nitride
Temp (°C)	780-800 (Higher T, Lower Stress)
Pressure (mT)	200-400
Gas1 (sccm)	SiH2Cl2 - 100
Gas2 (sccm)	NH3 - 25
Refractive Index	2.1
Deposition Rate (Å/min)	30-60

Recipe	Low Stress
Temp (°C)	780-880 (Higher T, Lower Stress)
Pressure (mT)	200-400
Gas1 (sccm)	SiH2Cl2 - 100
Gas2 (sccm)	NH3 - 20
Refractive Index	2.2
Deposition Rate (Å/min)	30-60

Recipe	Zero Stress or Compressive
Temp (°C)	780-800 (Higher T, Lower Stress)
Pressure (mT)	200-400
Gas1 (sccm)	SiH2Cl2 - 100
Gas2 (sccm)	NH3 - 16
Refractive Index	2.3
Deposition Rate (Å/min)	30-60

Contact Information

Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu