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Al Plasma Therm RIE
Cr Plasma Therm ICP
Cr Plasma Therm RIE
Aluminum
Aluminum Etch Plasma-Therm RIE
Temperature:
25 °C
Gases:
BCl
3
- 40 sccm
Cl
2
- 10 sccm
Pressure:
30 mTorr
Power:
125 W
DC-bias:
250 V
Etch Rate:
500-2000 Å/min
Chrome
Chrome Etch Plasma-Therm ICP
Temperature:
25 °C
Gases:
Step 1
Step 2
O
2
10 sccm
6 sccm
Cl
2
20 sccm
24 sccm
Pressure:
10 mTorr
10 mTorr
Power RF:
25 W
10 W
Power ICP:
600 W
500 W
Time:
20 sec
Endpoint
Chrome Etch Plasma-Therm RIE
Temperature:
25 °C
Gases:
Cl
2
- 40 sccm
O
2
- 10 sccm
Pressure:
75 mTorr
Power:
55 W
DC-bias:
50 V
Etch Rate:
100-200 Å/min
Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu
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