Etching Tools Polymer Recipes -

Etching Tools Polymer Recipes

Polyimide Isotropic Plasma Therm RIE

Polyimide Anistropic Plasma Therm RIE

Photoresist Plasma Therm RIE

Ashing Dry Resist Stripping O2 Plasma

Polyimide Isotropic

Polyimide Isotropic Plasma-Therm RIE
Temperature:	25 °C
Gases:	O2 - 40 sccm CF4 - 10 sccm
Pressure:	200 mTorr
Power:	250 W
Etch Rate:	5000 Å/min

Polyimide Anistropic

Polyimide Anistropic Plasma-Therm RIE
Temperature:	25 °C
Gases:	O2 - 10 sccm He - 10 sccm
Pressure:	10 mTorr
Power:	200 W
Etch Rate:	1000 Å/min

Photoresist

Photoresist Plasma-Therm RIE
Temperature:	25 °C
Gases:	O2 - 10 sccm He - 10 sccm
Pressure:	10 mTorr
Power:	200 W
Etch Rate:	1000 Å/min

Ashing Dry Resist Stripping O2 Plasma
Temperature:	25 - 40 °C
Gases:	CH4 - 10 sccm CH4 - 10 sccm
Pressure:	30 mTorr
Power:	200 W
DC-bias:	440 V
Etch Rate:	400 Å/min

Contact Information

Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu