Dielectric PECVD Deposition (non-thermal) -

Dielectric PECVD Deposition (non-thermal)

Standard Silicon Oxide

High-Frequency Silicon Oxide

Low-Frequency Silicon Oxide

Standard Nitride

High-Frequency Silicon Nitride

Low Frequency Silicon Nitride

Low Stress Silicon Nitride

Silicon Oxynitride

Silicon Carbide

Diamond-Like Carbon

Silicon Oxide

Standard

PlasmaTherm PECVD - Standard Oxide
Temp (°C)	100-350
Pressure (mT)	900
Gases (sccm)	SiH4 (2% in N2) - 400 N2O - 900
Power (W)	25
Deposition Rate (Å/min)	400

Unaxis PECVD - Standard Oxide
Temp (°C)	100-350
Pressure (mT)	900
Gases (sccm)	SiH4 (5% in He) - 400 N2O - 900
Power (W)	30
Deposition Rate (Å/min)	600

High Frequency -

STS PECVD High Frequency
Temperature:	300 °C
Gases:	SiH4 (2% in N2) - 400 sccm N2O - 1420 sccm
Pressure:	800 mTorr
Power:	20 W @ 13.56 MHz

Recipe: hfsio.set
N2O	1420 sccm
(2%) SiH4	400 sccm
Process Pressure	800 mT
Process Temp.	300°C
Aux Temp.	250 °C
RF Forward Power (13.56 MHz)	20 W
Load Position	51.0 %
Tune Position	61.6 %

Fit Parm:	Oxide Thickness Å	Index N@633nm	Index N@1550	MSE
Average:	4874.2	1.4791	1.4707	4.0460
Minimum:	4861.3	1.4783	1.4690	2.5700
Maximum:	4883.4	1.4806	1.4725	6.6600
Std Dev:	8.5020	9.8336E-4	0.0013502	1.6836
% Range:	0.22609	0.077750	0.11899	50.544

1:(0.00,1.50)	4883.4	1.4783	1.4698	2.5700
2:(-1.50,0.00)	4880.3	1.4796	1.4713	2.6500
3:(0.00,0.00)	4873.1	1.4788	1.4707	3.7600
4:(1.50,0.00)	4861.3	1.4806	1.4725	4.5900
5:(0.00,-1.50)	4873.0	1.4783	1.4690	6.6600

Low Frequency - STS PECVD

Low Frequency
Temperature:	300 °C
Gases:	SiH4 (2% in N2) - 400 sccm N2O - 1420 sccm
Pressure:	550 mTorr
Power:	60 W @ 380 KHz

Recipe: lfsio.set
N2O	1420 sccm
(2%) SiH4	400 sccm
Process Pressure	550 mT
APC Angle	67.8°C
Process Temp.	300°C
Aux Temp.	250 °C
RF Forward Power (380 kHz)	60 W
Load Position	10.0 %
Tune Position	62 %

Fit Parm:	Oxide Thickness Å	Index N@633nm	Index N@1550	MSE
Average:	7060.1	1.4677	1.4600	6.0880
Minimum:	7003.9	1.4495	1.4422	4.5900
Maximum:	7199.8	1.4737	1.4659	7.6000
Std Dev:	79.323	0.010272	0.010062	1.2212
% Range:	1.3874	0.82443	0.81164	24.721

1:(0.00,1.50)	7199.8	1.4495	1.4422	7.6000
2:(-1.50,0.00)	7003.9	1.4737	1.4659	5.5500
3:(0.00,0.00)	7042.6	1.4711	1.4635	5.6400
4:(1.50,0.00)	7030.2	1.4704	1.4625	7.0600
5:(0.00,-1.50)	7024.1	1.4737	1.4659	4.5900

Silicon Nitride

Standard

PlasmaTherm PECVD - Standard Nitride
Temperature:	200-350 °C
Gases:	SiH4 (2% in N2) - 200 sccm N2 - 900 sccm NH3 - 5 sccm
Pressure:	900 mTorr
Power:	25 W
Deposition Rate (Å/min)	100

Unaxis PECVD - Standard Nitride
Temperature:	200-350 °C
Gases:	SiH4 - 4 sccm N2 - 1100 sccm NH3 - 5 sccm
Pressure:	900 mTorr
Power:	25 W
Deposition Rate (Å/min)	100

High Frequency - STS PECVD

High Frequency
Temperature:	300 °C
Gases:	SiH4 (2% in N2) - 2000 sccm N2 - 40 sccm
Pressure:	900 mTorr
Power:	20 W @ 13.56 MHz

Recipe: hfsin.set
NH3	40 sccm
(2%)	SiH4 2000
Process Pressure	800 mT
Process Temp.	300°C
Aux Temp.	250°C
RF Forward Power (13.56 MHz)	20 W
Load Position	57.4%
Tune Position	60.8%

Fit Parm:	Nitride Thickness Å	Index N@633nm	Index N@350nm	K@350nm	MSE
Average:	2456.7	2.0474	2.3388	0.068900	24.234
Minimum:	2446.1	2.0386	2.3250	0.063300	15.500
Maximum:	2469.3	2.0605	2.3514	0.075700	32.190
Std Dev:	10.727	0.0088248	0.012343	0.0057650	7.0441
% Range:	0.47157	0.53483	0.56438	8.9986	34.435

1:(0.00,1.50)	2448.9	2.0517	2.3473	0.063300	23.440
2:(-1.50,0.00)	2446.1	2.0605	2.3442	0.063900	32.190
3:(0.00,0.00)	2451.9	2.0413	2.3514	0.067400	30.360
4:(1.50,0.00)	2469.3	2.0386	2.3262	0.075700	19.680
5:(0.00,-1.50)	2467.0	2.0448	2.3250	0.074200	15.500

Low Frequency - STS PECVD

Low Frequency
Temperature:	300 °C
Gases:	SiH4 (2% in N2) - 2000 sccm N2 - 10 sccm
Pressure:	550 mTorr
Power:	60 W @ 380KHz

Recipe: lfsin.set
NH3	10 sccm
(2So) SiH4	2000
Process Pressure	550 mT
Process Temp.	300°C
Aux Temp.	250°C
RF Forward Power (13.56 MHz)	60 W
Load Position	0.0%
Tune Position	57.0%

Fit Parm:	Nitride Thickness Å	Index N@633nm	Index N@350nm	K@350nm	MSE
Average:	8755.4	2.0317	1.9319	0.025300	22.692
Minimum:	8646.4	2.0133	1.6970	0.021800	16.000
Maximum:	8874.2	2.0513	2.0541	0.028800	31.830
Std Dev:	84.524	0.013671	0.15640	0.0026954	6.6062
% Range:	1.3008	0.93520	9.2423	13.834	34.880

1:(0.00,1.50)	8874.2	2.0133	2.0225	0.026900	19.120
2:(-1.50,0.00)	8646.4	2.0513	1.6970	0.025100	19.200
3:(0.00,0.00)	8781.7	2.0287	2.0411	0.021800	27.310
4:(1.50,0.00)	8762.1	2.0298	1.8447	0.023900	31.830
5:(0.00,-1.50)	8712.4	2.0352	2.0541	0.028800	16.000

Low Stress

STS PECVD - Low Stress
Temperature:	300 °C
Gases:	SiH4 (2% in N2) - 2000 sccm N2 - 30 sccm
Pressure:	750 mTorr
Power:	20 W @ 13.56 MHz / 6 sec	20 W @ 380 KHz/1.5 sec

Unaxis PECVD - Low Stress (He Based)
Temperature:	250 °C
Gases:	SiH4 (5% in He) - 200 sccm NH3 - 8 sccm He - 560 sccm N2 - 150 sccm
Pressure:	900 mTorr
Power:	30 W
Deposition Rate (Å/min)	100

Silicon Oxynitride

Unaxis PECVD
Temperature:	200-350 °C
Gases:	SiH4 (100%) - 6 sccm N2 - 1200 sccm NH3 - 30 sccm N2O - 30 sccm
Pressure:	900 mTorr
Power:	35 W
Deposition Rate (Å/min)	100-250

Silicon Carbide

Unaxis PECVD
Temperature:	300 °C
Gases:	SiH4 (5% in He) - 300 sccm He - 700 sccm CH4 - 100 sccm
Pressure:	900 mTorr
Power:	50 W
Deposition Rate (Å/min)	50

Diamond-Like Carbon

Astex ECR
Temperature:	25 °C
Gases:	CH4 - 75 sccm
Pressure:	200 mTorr
Power:	40 W
DC-bias:	110 V

Contact Information

Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu