Etching Tools Dielectric Recipes -

Etching Tools Dielectric Recipes

Silicon Nitride Plasma-Therm ICP

Silicon Nitride Plasma-Therm RIE High Rate

Silicon Nitride Plasma-Therm RIE Selective to Si

Silicon Nitride Plasma-Therm RIE Passivation Removal

Silicon Oxide Plasma-Therm ICP Standard

Silicon Oxide Plasma-Therm ICP High Selectivity

Silicon Oxide Plasma-Therm RIE

Gallium Nitride Plasma-Therm ICP

Indium Phosphide Plasma-Therm RIE

Zinc Sulfide Plasma-Therm RIE

Silicon Nitride

Silicon Nitride Plasma-Therm ICP
Temperature:	25 °C
He Backside Pressure:	7-9 Torr
Gases:	CF4 - 30 sccm
Pressure:	5 mTorr
Power (RF):	50 W
Power (ICP):	400 W
Etch Rate:	2000 Å/min

Silicon Nitride Plasma-Therm RIE High Rate
Temperature:	25 °C
Gases:	CF4 - 45 sccm O2 - 5 sccm
Pressure:	40 mTorr
Power:	200 W
DC-bias:	425 V
Etch Rate:	1000 - 2000 Å/min

Silicon Nitride Plasma-Therm RIE Selective to Si
Temperature:	25 °C
Gases:	CHF3 - 45 sccm O2 - 5 sccm
Pressure:	40 mTorr
Power:	200 W
DC-bias:	440 V
Etch Rate:	400 - 500 Å/min

Silicon Nitride Plasma-Therm RIE Passivation Removal
Temperature:	25 °C
Gases:	SF6 - 33 sccm O2 - 7 sccm
Pressure:	75 mTorr
Power:	85 W
Etch Rate:	1000 Å/min

Silicon Oxide

Silicon Oxide Plasma-Therm ICP Standard
Temperature:	25 °C
He backside pressure (Torr):	7-9
Gases:	PR Mask	Cr Mask
CF4	30 sccm	25 sccm
Pressure:	5 mTorr	12 mTorr
Power RF:	100 W	60 W
Power ICP:	400 W	800 W
Etch Rate:	2000 Å/min	3500 Å/min

Silicon Oxide Plasma-Therm ICP High Selectivity
Temperature:	25 °C
Gases:	C4F6 - 10 sccm O2 - 3 sccm Ar - 15 sccm CF4 - 10 sccm
Pressure:	5 mTorr
Power RF:	400 W
Power ICP:	100 W
Etch Rate:	1265 Å/min
Selectivity:	10:1 SiO2:Si virtually no PR etched

Silicon Oxide Plasma-Therm RIE
Temperature:	25 °C
Gases:	CHF3 - 45 sccm O2 - 5 sccm
Pressure:	40 mTorr
Power:	200 W
DC-bias:	440 V
Etch Rate:	400 - 500 Å/min

Gallium Nitride

Gallium Nitride Plasma-Therm ICP
Temperature:	25 °C
Gases:	BCl3 - 15 sccm Cl2 - 4 sccm
Pressure:	5 mTorr
Power (RF):	300 W
Power (ICP):	300 W
DC-bias:	100 V
Etch Rate:	0.2 - 0.3 µ/min
Selectivity (Mask):	0.5 - 0.7 (PR)

Indium Phosphide

Indium Phosphide Plasma-Therm RIE
Temperature:	25 - 40 °C
Gases:	CH4 - 10 sccm H2 - 40 sccm
Pressure:	30 mTorr
Power:	200 W
DC-bias:	440 V
Etch Rate:	400 Å/min

Zinc Sulfide

Zinc Sulfide Plasma-Therm RIE
Temperature:	25 °C
Gases:	Ar - 25 sccm H2 - 25 sccm
Pressure:	30 mTorr
Power:	500 W
Etch Rate:	250 Å/min

Contact Information

Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu