IMS- Micro/Nano Fabrication Facility
Low Stress

STS PECVD

Low Stress
Temperature: 300 °C
Gases: SiH4 (2% in N2) - 2000 sccm
N2 - 30 sccm
Pressure: 750 mTorr
Power: 20 W @ 13.56 MHz / 6 sec
20 W @ 380 KHz / 1.5 sec
 

Unaxis PECVD

Low Stress (He Based)
Temperature: 250 °C
Gases: SiH4 (5% in He) - 200 sccm
NH3 - 8 sccm He - 560 sccm N2 - 150 sccm
Pressure: 900 mTorr
Power: 30 W
Deposition Rate: 100 Å/min
Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
© Georgia Institute of Technology