IMS- Micro/Nano Fabrication Facility
Silicon Oxynitride

Unaxis PECVD

Temperature:
200 - 350 °C
Gases:
SiH4 (100%) - 6 sccm
N2 - 1200 sccm NH3 - 30 sccm N2O - 30 sccm
Pressure:
900 mTorr
Power:
35 W
Deposition Rate:
100 - 250 Å/min
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