IMS- Micro/Nano Fabrication Facility
High Frequency

STS PECVD

High Frequency
Temperature: 300 °C
Gases: SiH4 (2% in N2) - 2000 sccm
N2 - 40 sccm
Pressure: 900 mTorr
Power: 20 W @ 13.56 MHz

Recipe: hfsin.set

NH3 40 sccm
(2%) SiH4 2000
Process Pressure 800 mT
Process Temp. 300°C
Aux Temp. 250°C
RF Forward Power (13.56 MHz) 20 W
Load Position 57.4%
Tune Position 60.8%
 
 
 
Fit Parm:
Nitride Thickness Å
Index N @ 633nm
Index N @ 350nm
K @ 350nm
MSE
Average:
2456.7
2.0474
2.3388
0.068900
24.234
Minimum:
2446.1
2.0386
2.3250
0.063300
15.500
Maximum:
2469.3
2.0605
2.3514
0.075700
32.190
Std Dev:
10.727
0.0088248
0.012343
0.0057650
7.0441
% Range:
0.47157
0.53483
0.56438
8.9986
34.435
 
1:(0.00,1.50)
2448.9
2.0517
2.3473
0.063300
23.440
2:(-1.50,0.00)
2446.1
2.0605
2.3442
0.063900
32.190
3:(0.00,0.00)
2451.9
2.0413
2.3514
0.067400
30.360
4:(1.50,0.00)
2469.3
2.0386
2.3262
0.075700
19.680
5:(0.00,-1.50)
2467.0
2.0448
2.3250
0.074200
15.500
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