IMS- Micro/Nano Fabrication Facility
Low Frequency

STS PECVD

Low Frequency
Temperature: 300 °C
Gases: SiH4 (2% in N2) - 2000 sccm
N2 - 10 sccm
Pressure: 550 mTorr
Power: 60 W @ 380 KHz
 

Recipe: lfsin.set

NH3
10 sccm
(2So) SiH4
2000
Process Pressure
550 mT
Process Temp.
300°C
Aux Temp.
250°C
RF Forward Power (13.56 MHz)
60 W
Load Position
0.0%
Tune Position
57.0%

 

Fit Parm:
Nitride Thickness Å
Index N @ 633nm
Index N @ 350nm
K @ 350nm
MSE
Average:
8755.4
2.0317
1.9319
0.025300
22.692
Minimum:
8646.4
2.0133
1.6970
0.021800
16.000
Maximum:
8874.2
2.0513
2.0541
0.028800
31.830
Std Dev:
84.524
0.013671
0.15640
0.0026954
6.6062
% Range:
1.3008
0.93520
9.2423
13.834
34.880
 
1:(0.00,1.50)
8874.2
2.0133
2.0225
0.026900
19.120
2:(-1.50,0.00)
8646.4
2.0513
1.6970
0.025100
19.200
3:(0.00,0.00)
8781.7
2.0287
2.0411
0.021800
27.310
4:(1.50,0.00)
8762.1
2.0298
1.8447
0.023900
31.830
5:(0.00,-1.50)
8712.4
2.0352
2.0541
0.028800
16.000

 

Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
© Georgia Institute of Technology