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Processing
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Processing Information
Recipe Library
Standard
PlasmaTherm PECVD
Standard Nitride
Temperature:
200 - 350 °C
Gases:
SiH
4
(2% in N
2
) - 200 sccm
N
2
- 900 sccm NH
3
- 5 sccm
Pressure:
900 mTorr
Power:
25 W
Deposition Rate:
100 Å/min
Unaxis PECVD
Standard Nitride
Temperature:
200 - 350 °C
Gases:
SiH
4
(100%) - 4 sccm
N
2
- 1100 sccm NH
3
- 5 sccm
Pressure:
900 mTorr
Power:
25 W
Deposition Rate:
100 Å/min
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