Low Frequency -

Low Frequency

STS PECVD

Low Frequency
Temperature:	300 °C
Gases:	SiH₄ (2% in N₂) - 400 sccm N₂O - 1420 sccm
Pressure:	550 mTorr
Power:	60 W @ 380 KHz

Recipe: lfsio.set

N2O	1420 sccm
(2%) SiH4	400 sccm
Process Pressure	550 mT
APC Angle	67.8°
Process Temp.	300°C
Aux Temp.	250°C
RF Forward Power (380kHz)	60W
Load Position	10%
Tune Position	62%

Fit Parm:	Oxide Thickness Å	Index N @ 633nm	Index N@1550	MSE
Average:	7060.1	1.4677	1.4600	6.0880
Minimum:	7003.9	1.4495	1.4422	4.5900
Maximum:	7199.8	1.4737	1.4659	7.6000
Std Dev:	79.323	0.010272	0.010062	1.2212
% Range:	1.3874	0.82443	0.81164	24.721

1:(0.00,1.50)	7199.8	1.4495	1.4422	7.6000
2:(-1.50,0.00)	7003.9	1.4737	1.4659	5.5500
3:(0.00,0.00)	7042.6	1.4711	1.4635	5.6400
4:(1.50,0.00)	7030.2	1.4704	1.4625	7.0600
5:(0.00,-1.50)	7024.1	1.4737	1.4659	4.5900