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Processing Information
Recipe Library
High Frequency
STS PECVD
High Frequency
Temperature:
300 °C
Gases:
SiH
4
(2% in N
2
) - 400 sccm
N
2
O - 1420 sccm
Pressure:
800 mTorr
Power:
20 W @ 13.56 MHz
Recipe: hfsio.set
N2O
1420 sccm
(2%) SiH4
400 sccm
Process Pressure
800 mT
Process Temp.
300°C
Aux Temp.
250 °C
RF Forward Power (13.56 MHz)
20 W
Load Position
51.0 %
Tune Position
61.6 %
Fit Parm:
Oxide Thickness Å
Index N @ 633 nm
Index N@1550
MSE
Average:
4874.2
1.4791
1.4707
4.0460
Minimum:
4861.3
1.4783
1.4690
2.5700
Maximum:
4883.4
1.4806
1.4725
6.6600
Std Dev:
8.5020
9.8336E-4
0.0013502
1.6836
% Range:
0.22609
0.077750
0.11899
50.544
1:(0.00,1.50)
4883.4
1.4783
1.4698
2.5700
2:(-1.50,0.00)
4880.3
1.4796
1.4713
2.6500
3:(0.00,0.00)
4873.1
1.4788
1.4707
3.7600
4:(1.50,0.00)
4861.3
1.4806
1.4725
4.5900
5:(0.00,-1.50)
4873.0
1.4783
1.4690
6.6600
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