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Processing
Equipment Baseline
Process Support Team
Processing Fundamentals
Processing Information
Etching
Furnace Process
Packaging
Photolithography
Lithography Mask Aligner Comparisons
Photo-resist Information
D: MF 319
D: MF 351
Futurrex NR71-3000p
Futurrex NR9-1500py
Megaposit SPR220-7.0
Microposit S1813/S1827
R: Microposit 1165a remover
Resist Coating Tools
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Thin Film
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Photo-resist Information
Please refer to the technical data sheets in the related links.
Name
Description
Category
Wavelength
Developer
Stripper
SC 1813
Typical thickness is 1-4 um
Positive
g-line
MF-319,351
1165A
SC 1827
Typical thickness is 1.5-7 um
Positive
g-line
MF-319, 351
1165A
SPR 220.7.0
Excellent adhesion and plating characteristics
Ideal for MEMs and bump processes
Broadband, g-line and i-line capable
>10 um film thickness in a single coat with good uniformity (Typically 6-35 um thickness)
Au, Cu, Ni/Fe plating without cracking
Recommended to use HMDS for adhesion to some substrates
Positive
i-line
MF-319, 351
1165 A
NR71-3000p
Straight resist sidewall profile
Fast develop time
Superior resolution capability
Typically for 2-13 um thicknesses
Temperature resistance of up to 180C
Superior selectivity in RIE process
Does not require HMDS
Negative
i-line
RD6
RR41
RR9-1500PY
Single layer lift off process to pattern metals and dielectrics without RIE
Sensitivity to wavelengths shorter than 380 nm
Typically 1.25-3 um thickness
Superior resolution capability
Fast develop time
Temperature resistance of up to 100C
Negative
i-line
RD6
RR41
Related Links
Current Baseline Results
Lithography Terms from microchem
Lithography Troubleshooting Guide from Microchem
Lithography, Positive/Negative from MicroChem
SU 8 Lithography Website
TD: Futurrex NR71-3000P
TD: Futurrex NR9-1500 PY
TD: Megaposit SPR220
TD: Microposit S1813/1827
Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu
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