IMS- Micro/Nano Fabrication Facility
Selective Etchants Reference

Understand the possible reactions when mixing chemicals.

Many processing steps require mixing liquid chemicals together. Users should make themselves aware of the chemical reactions possible when mixing chemicals in order to minimize the risk to themselves and others around.

For example, always add acids to water. Adding water to an acid causes a highly exothermic reaction which can cause a fire and release dangerous gases into the air.

Please use the tables below with care.


Etchant

Materials Etched

Acetic Acid (H3COOH) GaAs; Pb; Ti
Hydrochloric Acid (HCl) Al; Cr; Cu; Fe2O3; Ga; GaAs; GaN; In; Fe; Pb; Ni; NiO, Ni2O3; Sn; SnO2; Ti; Zn
Hydrofluoric Acid (HF) GaAs; Ni; SiO2; Ti
Nitric Acid (HNO3) C; Cu; GaAs; In; Fe; Pb; Ni; Ag; Pd; Pt; Sn; Ti; Zn; ZnO
Phosphoric Acid (H3PO4) Al; Cu; GaAs; GaN; Fe; Ni; SiN; ZnO
Potassium Hydroxide (KOH) Al; C; Cu; Ag; GaAs; Si; Ti
Sodium Hydroxide (NaOH) Al; Cu; Ag; Ti; GaAs; GaN
Sulfuric Acid (H2SO4) C; Cu; GaAs; Fe; Pb; Ni; Ti
Aqua Regia (3 HCl : 1 HNO3) etches all metals
   

Etchant

Rate

Also etches

Doesn't etch

Aluminum (Al)
  19 H3PO4 : 1 HAc : 1 HNO3 : 2 H2O 40 �/s SiN, M SiO2, Si, PR
10% K3Fe(CN)6 100 �/s   ZnO, SiO2, SiN, Si, M, PR
Aluminum Oxide (Al2O3)
  1 NH4OH : 1 H2O2 : 3 H2O @ 80 �C   Al, Poly SiO2, SiN, Si, M
Brass (alloy Cu : Zn)
  FeCl3   Cu, Ni SiO2, SiN, Si, M, PR
20% NH4SO5   Al SiO2, SiN, Si, M, PR
Bronze (alloy Cu : Sn)
  1% CrO3     SiO2, SiN, Si, PR
Carbon (C)
  H3PO4 : CrO3 : NaCN   SiN SiO2, Si, PR
Chromium (Cr)
  2 KMnO4 : 3 NaOH : 12 H2O   Al SiO2, SiN, Si, M, PR
Copper (Cu)
  30% FeCl3   Ni SiO2, SiN, Si, M, PR
20% KCN   Ag, Au Al2O3, SiO2, SiN, Si, M, PR
Gallium Arsenide (GaAs)
  5% Br2 in CH3OH   Fe SiO2, SiN, Si, M
1 NH4OH : 1 H2O2   Al, Ag, Poly SiO2, SiN, Si, M
Gold (Au)
  1 I2 : 2 KI : 10 H2O   Fe SiO2, SiN, Si, M, PR
KCN   Ag, Cu Al2O3, SiO2, SiN, Si, M, PR
Iron (Fe)
  1 I2 : 2 KI : 10 H2O   Au SiO2, SiN, Si, M, PR
Nickel (Ni)
  30% FeCl3   Cu SiO2, SiN, Si, M, PR
Polymers (e.g.: photoresist, wax, epoxies)
  5 NH4OH : 1 H2O2 @ 120 �C   Al SiO2, SiN, Si, M
Silicon (Si)
  64 HNO3 : 3 NH4F : 33 H2O 100 �/s M SiN, PR
61 EDA : 11 C6H4(OH)2 : 28 H2O 78 �/s Poly SiO2, SiN, M
Silicon Oxide (SiO2)
  1 HF : 5 NH4HF : 5 H2O (BOE) 20 �/s M, SiO2 SiN, Si
Silver (Ag)
  1 NH4OH : 1 H2O2   Al, Poly SiO2, SiN, Si, M
Stainless Steel (alloy Fe : C : Cr)
  1 HF : 1 HNO3   M SiN, PR
Tin (Sn)
  2 HClO4 : 7 HAc     SiO2, SiN, Si, PR

Chemical Formula/Symbol

 Chemical Name/Notation

H2O  deionized (DI) water (l)
HCl hydrochloric acid (38%, aq)
HF  hydrofluoric acid (49%, aq)
HNO3 nitric acid (70%, aq)
H2SO4  sulfuric acid (96%, aq)
H3PO4  phosphoric acid (85%, aq)
HAc  acetic acid (l, H3COOH)
HClO4 perchloric acid (68%, aq)
H2O2 hydrogen peroxide (30%, aq)
NH4OH ammonium hydroxide (30%, aq)
NH4F  ammonium fluoride (40%, aq)
CH3OH  methanol (l)
EDA  ethylenediamine (l, NH2O(CH2) 2NH2)
C6H4(OH)2  pyrocatechol (s)
NaOH  sodium hydroxide (s)
KOH  potassium hydroxide (s)
KCN potassium cyanide (s)
NaCN sodium cyanide (s)
KFe(CN)6 potassium ferrocyanide (s)
KMnO4 potassium permanganate (s)
FeCl3 ferric chloride (s)
NH4SO5 ammonium persulfate (s)
KI potassium iodide (s)
I2 iodine (s)
Br2 bromine (l)
CrO3 chromic oxide (s)
SiO2 silicon oxide
SiN silicon nitride (Si3N4, Si9N12)
Si mono- or polycrystalline silicon
M metals
PR photoresist (cured)
Poly other polymers

 

 

Contact Information
Hang Chen, Ph.D.
Process Support Manager
The Institute for Electronics and Nanotechnology at Georgia Tech
345 Ferst Drive, Atlanta GA, 30332 | 1152
404.894.3360 | hang.chen@ien.gatech.edu