IMS- Micro/Nano Fabrication Facility
Standard

PlasmaTherm PECVD

Temperature:
100 - 350 °C
Gases:
SiH4 (2% in N2) - 400 sccm
N2O - 900 sccm
Pressure:
900 mTorr
Power:
25 W
Deposition Rate:
400 Å/min

 

 

 

 

 

 

 

Unaxis PECVD

Temperature:
100 - 350 °C
Gases:
SiH4 (5% in He) - 400 sccm
N2O - 900 sccm
Pressure:
900 mTorr
Power:
30 W
Deposition Rate:
600 Å/min

 

 

 

Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
© Georgia Institute of Technology