Thermal Oxide Film Growth
Low Temperature
|
Temperature (°C)
|
400 - 450
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
SiH4 - 85
|
|
Gas 2 (sccm)
|
O2 - 120
|
|
Refractive Index
|
1.45
|
|
Rate (Å/min)
|
100 - 120
|
High Temperature
|
Temperature (°C)
|
700 - 850
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
N2O - 100
|
|
Gas 2 (sccm)
|
SiH2Cl2: 10 - 25
|
|
Refractive Index
|
1.45
|
|
Rate (Å/min)
|
50 - 100
|