Thermal Nitride Film Growth
Standard Nitride
|
Equipment
|
Tystar Furnace
|
|
Temperature (°C)
|
780 - 880 (Higher T, Lower Stress)
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
SiH2Cl2 - 33
|
|
Gas 2 (sccm)
|
NH3 - 100
|
|
Refractive Index
|
2.0
|
|
Deposition Rate (Å/min)
|
30 - 60
|
Low Stress Nitride
|
Recipe
|
Low Stress Tensile
|
|
Temperature (°C)
|
780 - 880 (Higher T, Lower Stress)
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
SiH2Cl2 - 100
|
|
Gas 2 (sccm)
|
NH3 - 25
|
|
Refractive Index
|
2.1
|
|
Deposition Rate (Å/min)
|
30 - 60
|
|
Recipe
|
Low Stress
|
|
Temp (°C)
|
780 - 880 (Higher T, Lower Stress)
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
SiH2Cl2 - 100
|
|
Gas 2 (sccm)
|
NH3 - 20
|
|
Refractive Index
|
2.2
|
|
Deposition Rate (Å/min)
|
30 - 60
|
|
Recipe
|
Zero Stress or Compressive
|
|
Temp (°C)
|
780 - 880 (Higher T, Lower Stress)
|
|
Pressure (mT)
|
200 - 400
|
|
Gas 1 (sccm)
|
SiH2Cl2 - 100
|
|
Gas 2 (sccm)
|
NH3 - 16
|
|
Refractive Index
|
2.3
|
|
Deposition Rate (Å/min)
|
30 - 60
|