IMS- Micro/Nano Fabrication Facility
Indium Phosphide Etch

Plasma-Therm RIE

Temperature:
25 - 40 °C
Gases:
CH4 - 10 sccm
H2 - 40 sccm
Pressure:
30 mTorr
Power:
200 W
DC-bias:
440 V
Etch Rate:
400 Å/min
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