IMS- Micro/Nano Fabrication Facility
Silicon Oxide Etch

Plasma-Therm ICP

Standard
Temperature:
25 °C
He backside pressure (Torr):
7-9
Gases:
PR Mask
Cr Mask
CF4
30 sccm
25 sccm
Pressure:
5 mTorr
12 mTorr
Power RF:
100 W
60 W
Power ICP:
400 W
800 W
Etch Rate:
2000 Å/min
3500 Å/min

 

High Selectivity
Temperature:
25 °C
Gases:
C4F6 - 10 sccm
O2 - 3 sccm
Ar - 15 sccm
CF4 - 10 sccm
Pressure:
5 mTorr
Power RF:
400 W
Power ICP:
100 W
Etch Rate:
1265 Å/min
Selectivity:
10:1 SiO2:Si
virtually no PR etched

Plasma-Therm RIE

Temperature:
25 °C
Gases:
CHF3 - 45 sccm
O2 - 5 sccm
Pressure:
40 mTorr
Power:
200 W
DC-bias:
440 V
Etch Rate:
400 - 500 Å/min

 

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