IMS- Micro/Nano Fabrication Facility
Silicon Nitride Etch

Plasma-Therm ICP

Temperature:
25 °C
He Backside Pressure:
7-9 Torr
Gases:
CF4 - 30 sccm
Pressure:
5 mTorr
Power (RF):
50 W
Power (ICP):
400 W
Etch Rate:
2000 Å/min

Plasma-Therm RIE

High Rate
Temperature:
25 °C
Gases:
CF4 - 45 sccm
O2 - 5 sccm
Pressure:
40 mTorr
Power:
200 W
DC-bias:
425 V
Etch Rate:
1000 - 2000 Å/min

 

Selective to Si
Temperature:
25 °C
Gases:
CHF3 - 45 sccm
O2 - 5 sccm
Pressure:
40 mTorr
Power:
200 W
DC-bias:
440 V
Etch Rate:
400 - 500 Å/min

 

Passivation Removal
Temperature:
25 °C
Gases:
SF6 - 33 sccm
O2 - 7 sccm
Pressure:
75 mTorr
Power:
85 W
Etch Rate:
1000 Å/min
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