IMS- Micro/Nano Fabrication Facility
Poly-Silicon Film
Temp (°C)
580 - 650 (Lower T, Lower Stress)
Pressure (mT)
200 - 400
Gas (sccm)
SiH4: 50 - 100
Refractive Index
4.0
Rate (Å/min)
50 - 100 (Lower T/P, Lower Dep. Rate)
Georgia Institute of Technology
Shared User Management System
791 Atlantic Drive
Atlanta GA 30332-0269 
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