IMS- Micro/Nano Fabrication Facility
Gallium Nitride Etch

Plasma-Therm ICP

Temperature:
25 °C
Gases:
BCl3 - 15 sccm
Cl2 - 4 sccm
Pressure:
5 mTorr
Power (RF):
300 W
Power (ICP):
300 W
DC-bias:
100 V
Etch Rate:
0.2 - 0.3 µ/min
Selectivity (Mask):
0.5 - 0.7 (PR)
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